Technique for Monolithic Fabrication of Microlens Arrays Integrated with Infrared CCD

Based on scalar diffraction theory, 8-phase-level 256×256 elements diffractive microlens array with element dimension of 50×33 μm2 have been fabricated on the back-side of PtSi(3～5 μm) infrared CCD. The measurement results indicated that the ratio of the signal-to-noise of the infrared CCD with microlens was increased by a factor of 2.8.     

ToF-SIMS analysis of a fluorocarbon-grafted PET with a gold cluster ion source

Cluster ions have been recognized as a superb primary species in time of flight secondary ion mass spectroscopy (ToF-SIMS) compared with monatomic primary ions, as they significantly enhance the secondary ion yields from bulk samples. Self-assembled monolayers provide an important system for studying the fundamental mechanism involved in the yield enhancement.We used a gold cluster ion source to analyze a new type of self-assembled monolayer: a fluorocarbon-grafted polyethylene terephthalate. In addition to the structure details, which helped to understand the grafting mechanism, ToF-SIMS analysis revealed that fluorocarbon secondary ion yield enhancements by cluster ions were due to the enhanced sputter efficiency. A larger information depth may also be expected from the enhancement. Both mathematical definitions of damage cross-section and disappearance cross-section were revisited under a new context. Another cross-section parameter, sputter cross-section, was introduced to differentiate the beam induced sputter process from damage process.     

氢离子与碳膜相互作用的实验研究

此文报道了H+、H+2和H+3离子通过碳膜后,在其中产生的各种微量产物的测量结果.讨论了离子与碳膜作用中的电荷交换过程.分析了这些微量产物的形成机理.实验证明在产物的形成中电荷交换过程起关键作用.研究了离子与碳膜作用中的团簇效应和尾流效应.     

用离子速度影象技术研究n-C4H9Br的光解

利用离子速度影象技术研究了正一溴丁烷(n-C4H9Br)在231~267 nm波段的光解,得出了如下结论:正一溴丁烷(n-C4H9Br)在231~267 nm波段的吸收源于基态到三个最低激发态的跃迁,这三个激发态标识为1A″、2A′和3A′;发生在这三个排斥态的势能面(PES)上的光解最终导致C4H9 Br(2P3/2)或C4H9 Br*(2P1/2)的产生;2A′和3A′态之间存在避免交叉(Avoided crossing)会影响最终的光解产物;从基态1A′到激发态1A″的跃迁矩垂直于对称面,也就垂直于C-Br键;从基态1A′到激发态3A′的跃迁矩平行于对称面,同时平行于C-Br键;从基态1A′到激发态2A′的跃迁矩在对称面内,且与C-Br键成53.1°夹角.我们也讨论了正一溴丁烷(n-C4H9Br)在234 nm和267 nm附近光解时的避免交叉几率(Avoided crossingprobability),以及它对单通道相对产额(Relative fraction of the individual pathways)的影响.     

40Ar+诱导无定形碳到金刚石纳米晶相变的研究

通过60 keV的⁴⁰Ar⁺辐照无定形碳靶合成了大量尺寸不同的金刚石纳米颗粒.高分辨透射电子显微镜配合能量色散X射线谱和电子衍射以及Raman谱分析的结果表明，这些嵌于具有扰动石墨结构薄膜中的纳米金刚石颗粒，其成核率很高(约为10¹³/cm²)，而且可以生长到较大的尺寸，有的甚至可以达到微米量级.对其相转变过程也进行了初步探讨. 关键词： 离子束 金刚石纳米晶 相变 透射电子显微镜     

低速高电荷态离子40Ar16+与云母表面作用中的电子发射研究

报道了由兰州ECR源提供的低速高电荷离子40Ar16 入射到云母表面产生的电子发射的实验测量结果.结果发现,电子发射产额Y与离子入射角ψ有近似1/tanψ的关系.基于经典过垒模型,我们对这一关系进行了理论分析.实验结果和理论结果相当符合,这就间接说明势能电子发射是低速高电荷态离子作用于表面发射电子的一个主要途径.     

Study of nitrogen ion implantation and diffusion phenomena on thin chromium layers followed by the atomic force microscopy and secondary ion mass spectroscopy techniques characterization

This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 10¹⁷, 3 × 10¹⁷, 6 × 10¹⁷ and 10 × 10¹⁷ N⁺ cm⁻² with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10⁻² Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr₂N phase near the surface as a result of higher N⁺ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr₂N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr₂N phase and nitrogen atoms diffusion history during the thermal treatment process.     

铽与苯甲酸及其衍生物配合物的合成与发光特性

合成了铽与苯甲酸及其衍生物(苯甲酸、邻苯二甲酸、间苯二甲酸、水杨酸、邻氨基苯甲酸、磺基水杨酸)的配合物。经元素分析确定其组成结构式。研究了它们的红外吸收光谱、紫外吸收光谱及荧光光谱。紫外光谱的研究表明,配合物的紫外吸收主要表现为配体的吸收;红外光谱的研究表明,配合物的红外光谱不同于自由配体的红外光谱;荧光光谱的研究表明,铽与这六个配体的配合物都表现出较好的荧光性能,并发现磺基水杨酸铽配合物在本实验系列中其荧光发射最强。     

射频磁控溅射法制备薄膜电池电极的计算机模拟初步

计算机模拟仿真射频磁控溅射实验制备薄膜及离于电池电极,研究了在特定实验条件下薄膜的生长过程,并分析了影响薄膜生长的部分因素。     

高功率离子束在漂移管中的中性化传输

 介绍了“闪光二号”加速器产生的高功率离子束在漂移管中的传输实验。对比了采用中性化措施前后的传输情况，分析了中性化措施对离子束束斑半径、束流均匀性的影响。根据实测的二极管电压模拟得到了传输一定距离后的束流波形，与实测结果符合较好。采取适当的中性化措施后，高功率离子束可以有效传输80 cm以上，束流发散得到抑制，束流均匀性得到改善。